| 1. | In this work , the influences of fabrication process on microstructure , dielectric properties , ferroelectric properties and pyroelectric properties of plt films have been studied . plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ) . with the help of atom force microscopy ( afm ) , x - ray diffraction ( xrd ) and some other apparatus , it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies . with the increase of substrate temperature , the dielectric constant of plt films increased
Afm 、 xrd以及性能测试结果表明:较低的基片温度有利于形成表面均匀致密的薄膜,且薄膜的表面粗糙度均方根较小;随着基片温度的升高,经过快速退火的plt薄膜的介电常数逐渐增大;相比于传统退火,快速退火缩短了退火时间,提高了薄膜的介电和铁电性能;快速退火随着保温时间的延长,大部分钙钛矿结构的特征峰的峰强增大,半高宽减小,峰形越来越尖锐,但当保温时间为80s的时候, ( 100 )和( 110 )峰的强度有所下降,因此保温时间在60s较为适宜。 |
